超晶格
硫化铅
量子点
化学
纳米晶
光电子学
钙钛矿(结构)
响应度
扩散
红外线的
光电探测器
锑化铟
胶体
量子隧道
纳米技术
二极管
金属
有机半导体
载流子寿命
量子阱
半导体
砷化铟
贵金属
硫化物
量子效率
硫族元素
电子迁移率
作者
Haobo Wu,Yu Chen,Xin Wen,W. M. Liu,Wenjia Zhou,Jiahui Du,Zihao Wang,Mingyu Ma,Hao Liang,Wei Zhou,Hao Wang,Yue Lu,Ziyao Ma,Yaxin Zhao,Zhiqiang Zou,Qingqing Ji,Baile Chen,Jun Jiang,Yi Yu,F. Pelayo Garcı́a de Arquer
摘要
Abstract The bottom-up assembly of colloidal quantum dots (CQDs) into superlattice structures is attractive for leveraging nanocrystal quantum features into films and optoelectronic devices. However, current CQD superlattices often require tedious control of the assembly kinetics, and they suffer from either excessively long interfacial distances, which impede carrier transport, or facet fusion, which brings high defect density. These hinder CQD superlattice applications in optoelectronic devices, where low defect density and large carrier diffusion lengths are essential. Herein, inspired by the growth of a two-dimensional (2D) perovskite layer, a class of aromatic organic cation ligands is adopted to stabilize CQDs and induce close and ordered packing of CQDs into a superlattice netted by an organic metal halogenide (QD@OMH), giving rise to a high carrier diffusion length (>250 nm) for lead sulfide (PbS) CQD film. The superlattice-based infrared photodetectors achieve a responsivity of 0.663 A W–1 at 1560 nm and an order-of-magnitude reduction in noise current density, yielding a detectivity exceeding 1013 Jones. Furthermore, the infrared light-emitting diodes achieve a high radiance (22.4 W sr–1 m–2) and an operational T90 lifetime exceeding 200 h under continuous operation at peak luminance.
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