Post annealing effects on InP single crystals grown by liquid encapsulated Czochralski method

We have investigated the post-growth annealing effects on InP single crystals. The materials we used were S-doped and Fe-doped InP single crystals grown by the liquid encapsulated Czochralski (LEC) method. These crystals were annealed at 900/spl deg/C-980/spl deg/C for 10 hours. Residual stress in the crystals was reduced by annealing, and a higher annealing temperature was more effective for the reduction of stress. A reduction of PL intensity was observed in annealed S-doped crystals, and the reduction was remarkable on the periphery. In the case of Fe-doped crystals a significant change of the PL signal was not observed, but there is some increase of Hall mobility.