材料科学
衍射
浅沟隔离
光电子学
图像传感器
棱锥(几何)
光学
硅
半导体
红外线的
图像分辨率
像素
沟槽
纳米技术
物理
图层(电子)
作者
Itaru Oshiyama,Sozo Yokogawa,Harumi Ikeda,Yoshiki Ebiko,Takuichi Hirano,Suguru Saito,Takashi Oinoue,Yoshiya Hagimoto,Hayato Iwamoto
标识
DOI:10.1109/iedm.2017.8268403
摘要
We demonstrated the near-infrared (NIR) sensitivity enhancement of back-illuminated complementary metal oxide semiconductor image sensors (BI-CIS) with a pyramid surface for diffraction (PSD) structures on crystalline silicon and deep trench isolation (DTI). The incident light diffracted on the PSD because of the strong diffraction within the substrate, resulting in a quantum efficiency of more than 30% at 850 nm. By using a special treatment process and DTI structures, without increasing the dark current, the amount of crosstalk to adjacent pixels was decreased, providing resolution equal to that of a flat structure. Testing of the prototype devices revealed that we succeeded in developing unique BI-CIS with high NIR sensitivity.
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