材料科学
过冷
无定形固体
碳化硅
分子动力学
再结晶(地质)
半导体
二极管
超短脉冲
钨
光电子学
辐射损伤
辐射
化学物理
复合材料
冶金
结晶学
光学
热力学
化学
激光器
计算化学
古生物学
物理
生物
作者
Ashwin Ravichandran,Mohit Mehta,Andrew A. Woodworth,John W. Lawson
摘要
Metal–semiconductor contacts in silicon carbide (SiC) diodes endure damages at the interface when exposed to harsh radiation environments. Due to the rapid rise in temperature and ultrafast cooling that follows the radiation impact, the structural properties of the materials can be altered through melting, recrystallization, and amorphization. A detailed understanding of the material failure modes at the interface is lacking, specifically at the nanoscale. We use molecular simulations to investigate the ultrafast melting at tungsten (W)–SiC interfaces following radiation damage and apply deep learning techniques to track the transient evolution of the local molecular structures. We show that W near the radiation track undergoes melting and, eventually, most of it recrystallizes with a noticeable degree of undercooling, while SiC is rendered permanently amorphous. The observation of local undercooling in W films is important as it can affect the device performance even before the bulk melting temperature of the material is reached. We also show that at high temperatures, the interface undergoes a fracture-like failure. The results presented here are significant in understating the different failure modes of SiC diode materials.
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