神经形态工程学
材料科学
铁电性
非易失性存储器
MNIST数据库
晶体管
堆栈(抽象数据类型)
油藏计算
光电子学
电子工程
记忆电阻器
人工神经网络
计算机科学
突触重量
纳米技术
逻辑门
特征(语言学)
智能材料
工作(物理)
电压
作者
Gaoyun An,Hyosoon Park,Hyeonho Lee,Gimun Kim,Tae‐Hyeon Kim,Heung Soo Kim,Chai Yang,S Kim
标识
DOI:10.1002/adma.202522251
摘要
ABSTRACT This work reports a hardware‐oriented hybrid reservoir computing (HRC) system based on a nanolaminate ferroelectric thin‐film transistor (FeTFT) that unifies volatile and nonvolatile functions in a single three‐terminal device. The HZO/HfO 2 /HZO gate stack modulates grain size and suppresses ferroelectric variability, enabling precise multilevel control and highly linear weight updates via the incremental step pulse with verify algorithm (ISPVA). Electrical input induces long‐term memory, while optical excitation yields short‐term memory, allowing dual‐mode operation. Light‐driven 4‐bit reservoirs operate at picoampere currents (∼10 pW/device) and emulate nociceptive neuron behavior. Combining three wavelength‐dependent reservoirs (405, 450, 532 nm) expands the feature space and improves classification accuracy. Using ISPVA‐linearized readout, the system achieves 93.1% and 85.1% accuracies on MNIST and Fashion‐MNIST, respectively exceeding prior FeTFT/memristor‐based RC systems. This approach establishes a scalable, energy‐efficient route toward multifunctional in‐sensor neuromorphic computing based on a unified ferroelectric platform.
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