Room Temperature Synthesis of Nanocubic CuInSe2 Thin Films

The arrested precipitation technique (APT) is used to deposit CuInSe 2 thin films. The deposition of thin films is carried out at room temperature. The optical study reveals direct allowed type of transition for CuInSe 2 thin films. The XRD pattern confirms mixed phase of CuInSe 2 thin films. The SEM image reveals nanocubic thin film formation. The EDS analysis confirms presence of copper, indium and selenium elements in the synthesized thin film. The synthesized thin films are beneficial for the solar cell applications.