材料科学
太赫兹辐射
调制(音乐)
接口(物质)
光电子学
功率(物理)
纳米技术
工程物理
复合材料
接触角
哲学
物理
坐滴法
量子力学
工程类
美学
作者
Daoyuan Wang,Chengyong Gao,Yunfeng Wang,Xue Chang,Yu-Hen Hu,Jiang Li,Tangdong Feng,Jayjit Kumar Dey,Basanta Roul,Xueguang Lu,Liang-Hui Du,Zhangyin Zhai,Huabing Zhu,Wanxia Huang,Sujit Das,Fuhai Su,Li-Guo Zhu,Qiwu Shi
标识
DOI:10.1021/acsami.3c16252
摘要
VO2, which exhibits semiconductor–metal phase transition characteristics occurring on a picosecond time scale, holds great promise for ultrafast terahertz modulation in next-generation communication. However, as of now, there is no reported prototype for an ultrafast device. The temperature effect has been proposed as one of the major obstacles. Consequently, reducing the excitation threshold for the phase transition would be highly significant. The traditional strategy typically involves chemical doping, but this approach often leads to a decrease in phase transition amplitude and a slower transition speed. In this work, we proposed a design featuring a highly conductive MXene interfacial layer between the VO2 film and the substrate. We demonstrate a significant reduction in the phase transition threshold for both temperature and laser-induced phase transition by adjusting the conductivity of the MXene layers with varying thicknesses. Our observations show that the phase transition temperature can be decreased by 9 °C, while the pump fluence for laser excitation can be reduced by as high as 36%. The ultrafast phase transition process on a picosecond scale, as revealed by the optical-pump terahertz-probe method, suggests that the MXene layers have minimal impact on the phase transition speed. Moreover, the reduced phase transition threshold can remarkably alleviate the photothermal effect and inhibit temperature rise and diffusion in VO2 triggered by laser. This study offers a blueprint for designing VO2/MXene hybrid films with reduced phase transition thresholds. It holds significant potential for the development of low-power, intelligent optical and electrical devices including, but not limited to, terahertz modulators based on phase transition phenomena.
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