材料科学
兴奋剂
插层(化学)
单层
凝聚态物理
费米能级
相(物质)
电荷密度
扫描隧道显微镜
Crystal(编程语言)
扫描隧道光谱
偶极子
量子隧道
电子结构
化学物理
纳米技术
无机化学
光电子学
化学
电子
物理
计算机科学
有机化学
程序设计语言
量子力学
作者
Ulysse Chazarin,Mahé Lezoualc’h,Jyh‐Ping Chou,Woei Wu Pai,Abhishek Karn,R. Sankar,Cyril Chacon,Yann Girard,Vincent Repain,Amandine Bellec,Sylvie Rousset,Alexander Smogunov,Yannick J. Dappe,Jérôme Lagoute
标识
DOI:10.1002/admi.202201680
摘要
Abstract Alkali atom doping is an efficient way to induce charge transfer and Fermi level tuning in layered materials through intercalation. However, there is a general lack of microscopic understanding of the effect of doping inhomogeneity in geometric and electronic aspects. Here, we report surface doping of a bulk VSe 2 crystal by sodium. Na atoms form intercalated subsurface islands that modify the electronic phase of the top layer of VSe 2 . In addition to n‐doping, the charge density wave of the intercalated VSe 2 surface layer changes from the (4 × 4) bulk phase to the () known in monolayer phase of VSe 2 . Surprisingly, an electronic state at the edges of Na‐intercalated area shift anomalously upward in energy as detected by scanning tunneling spectroscopy. This is explained by a local gating effect resulting from local dipoles at the edges. The study illustrates a clear example of intercalation effect that should be general in alkali‐intercalated bulk layered materials.
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