7 kV/16.5 mΩ·cm 2 E-mode active-passivation p-GaN gate HEMT exceeding SiC unipolar limit

Abstract This work reports an E-mode active-passivation p-GaN gate HEMT (AP-HEMT) fabricated with an AlN-based etch-stop technique. The AP-HEMT with L G / L GS / L GD = 5/3/52 μ m exhibits a low R ON of 26.2 Ω·mm (corresponding to R SP = 16.5 mΩ·cm 2 ). The breakdown voltage ( BV ) is over 7 kV, and a high effective breakdown field BV / L GD of 1.37 MV cm −1 is demonstrated. The Baliga’s figure of merit (BFOM = BV 2 / R SP ) is 3.05 GW cm −2 , exceeding the unipolar limit of the SiC. Additionally, a low dynamic R ON was achieved due to the active-passivation layer. With a 150 μ s delay after a drain stress voltage ( V DS-OFF ) of 3 kV, the dynamic R ON /static R ON ratio is 1.17. With a 300 ms delay after a 4.5 kV V DS-OFF stress, the dynamic R ON /static R ON ratio is 1.05. The device in this work demonstrates a breakthrough performance and validates the lateral GaN power device as a promising competitor for ultra-high-voltage applications.