Large Pre-Trained Models and Few-Shot Fine-Tuning for Virtual Metrology: A Framework for Uncertainty-Driven Adaptive Process Control in Semiconductor Manufacturing

High-precision wafer metrology poses significant cost and throughput challenges in modern semiconductor manufacturing, where frequent process changes and recipe variations demand highly adaptive and scalable solutions. In this paper, we present a Generative-FewShot-Active Virtual Metrology (GFA-VM) framework that unifies large-scale generative modeling, few-shot fine-tuning, and uncertainty-driven active sampling into a single, data-centric system. A foundational generative model, built on a hybrid architecture of Transformer networks and Variational Autoencoders (VAEs), learns diverse sensor characteristics in an offline stage without relying on extensive labeled data. During online inference, the model produces both wafer quality predictions and predictive uncertainties; samples exceeding a dynamic uncertainty threshold are selected for physical measurement and few-shot model recalibration. This selective sampling both reduces measurement costs and adapts rapidly to new process conditions (e.g., novel recipes or equipment upgrades), requiring only a handful of freshly labeled wafers. The paper further addresses the long-term stability of the system through a self-updating mechanism that adjusts the uncertainty threshold when distributional shifts occur. Empirical evaluations confirm that our GFA-VM approach achieves state-of-the-art accuracy while significantly reducing metrology overhead compared to conventional virtual metrology methods. Additionally, rigorous theoretical analyses—including proofs of convergence and label cost bounds—demonstrate the reliability of using a generative foundation plus meta-learning technique. By fostering on-demand adaptation within a closedloop framework, GFA-VM offers a comprehensive, scalable strategy for next-generation semiconductor process control.