Self-powered Schottky barrier photodiodes based on homoepitaxial Ga2O3 film

In this paper, we reported vertical self-powered Schottky barrier photodiode based on MOCVD homoepitaxial Ga2O3 film. Attributed to the high quality homoepitaxial Ga2O3 film, the device achieved a photo-to-dark current ratio of over 1 × 103, a responsivity of 0.59 A/W and a detectivity of 1.3 × 1013 Jones at 0 V under 10 μW/cm2 254 nm UV illumination. Meanwhile, the device obtained ultra-fast response with relaxation times superior to 10 ms. The comprehensive performance of the device exceeds that of most current self-powered photodetectors based on heteroepitaxial Ga2O3 film, demonstrating the potential of vertical Ga2O3 devices for photodetection.