Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

This paper reports a non-recessed normally off AlGaN/GaN high-electron-mobility transistor (HEMT) with a charge trapping gate dielectric stack. The charge trapping gate dielectric stack featuring a low density of fixed positive charges consists of an O3-based Al2O3 tunneling layer and an O3-based HfO2 blocking layer, both deposited via atomic layer deposition. For HEMT with a 15 nm AlGaN barrier layer, a threshold voltage of 2.57 V and an on-resistance of 8.50 Ω × mm are achieved. For positive bias temperature instability (PBTI) testing, the electric field provided by the 15 nm AlGaN layer serves as a barrier to channel carriers, significantly enhancing the PBTI test stability. The optimized gate dielectric stack enables the fabrication of the non-recessed normally off metal–insulator–semiconductor-HEMT with enhanced threshold voltage (Vth) stability.