太赫兹辐射
光电导性
光电子学
材料科学
基质(水族馆)
天线(收音机)
阴极射线
辐照
信号(编程语言)
偏压
电压
电子
电气工程
电信
计算机科学
物理
海洋学
工程类
量子力学
核物理学
程序设计语言
地质学
作者
Jia Yi Chia,Yan Zhang,Kaixuan Li,Woraprach Kusolthossakul,Asmar Sathukarn,Khwanchai Tantiwanichapan,Patharakorn Rattanawan,Rungroj Jintamethasawat,Nuatawan Thamrongsiripak,Noppadon Nuntawong
标识
DOI:10.35848/1882-0786/ac926d
摘要
Abstract One of the most important technological challenges that photoconductive devices in terahertz systems encounter is the viability of cost-effective and large-scale device production. We introduce an economical and mass-producible approach to fabricating a substrate material for photoconductive devices. By using an electron beam irradiator, the material properties of GaAs were engineered in a controllable manner, achieving comparable performance to that of a well-known photoconductive substrate, LT-GaAs. THz emission of the irradiated substrates was tested and found to be superior to a commercial device in terms of high-power THz signal emission and ability to withstand a high bias voltage.
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