New Method for Measurement of Electric-Field Distribution on Semiconductors

New electric-field measuring equipment was constructed. The electric-field distribution was obtained from potential distribution measured by a single capacitive probe through numerical calculation by a microcomputer. The single capacitive probe was fabricated with the technique of vacuum evaporation of aluminum and SiO. The electric-field distribution under acoustoelectric current oscillated state in CdS was measured. The electric-field distribution measured by the present method was compared with that obtained by the time derivative of potential.