Wet Etching Step Evolutions for Selective Removal on Silicide or Germanide Applications
锗
蚀刻（微加工）
硅化物
反应离子刻蚀
材料科学
纳米技术
冶金
硅
锗
图层（电子）
作者
V. Carron,P. Besson,François Pierre
出处
期刊：ECS transactions [Institute of Physics] 日期：2007-09-28卷期号：11 (2): 309-320被引量：8
标识
DOI：10.1149/1.2779393
摘要
The paper deals with the nickel selective etching chemistries with respect to NiGe and high Ge content NiSiGe layers. Chemistries depicted in the literature are discussed. A focus is put on H2SO4 96% ("water free" approach), for which the etching mechanism is investigated.
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