铁电RAM
非易失性存储器
材料科学
电阻随机存取存储器
非易失性随机存取存储器
随机存取存储器
灵活性(工程)
数码产品
晶体管
随机存取
纳米技术
计算机数据存储
闪存
数据保留
闪光灯(摄影)
铁电性
半导体存储器
计算机科学
电气工程
光电子学
嵌入式系统
计算机存储器
计算机硬件
内存刷新
工程类
操作系统
艺术
电压
视觉艺术
电介质
统计
数学
作者
Su‐Ting Han,Ye Zhou,V. A. L. Roy
标识
DOI:10.1002/adma.201301361
摘要
Flexible non-volatile memories have attracted tremendous attentions for data storage for future electronics application. From device perspective, the advantages of flexible memory devices include thin, lightweight, printable, foldable and stretchable. The flash memories, resistive random access memories (RRAM) and ferroelectric random access memory/ferroelectric field-effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non-volatile memory device. Here, we review the general background knowledge on device structure, working principle, materials, challenges and recent progress with the emphasis on the flexibility of above three categories of non-volatile memories.
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