压电响应力显微镜
抗磁性
多铁性
材料科学
铁电性
凝聚态物理
铁磁性
磁矩
密度泛函理论
居里温度
兴奋剂
Atom(片上系统)
居里
纳米技术
化学
计算化学
磁场
光电子学
物理
计算机科学
电介质
嵌入式系统
量子力学
作者
Huai Yang,Longfei Pan,Mengqi Xiao,Jingzhi Fang,Yu Cui,Zhongming Wei
标识
DOI:10.1007/s40843-019-1212-x
摘要
Multiferroic materials exhibit tremendous potentials in novel magnetoelectric devices such as high-density non-volatile storage. Herein, we report the coexistence of ferroelectricity and ferromagnetism in two-dimensional Fe-doped In2Se3 (Fe0.16In1.84Se3, FIS). The Fe atoms were doped at the In atom sites and the Fe content is ~3.22% according to the experiments. Our first-principles calculation based on the density-functional theory predicts a magnetic moment of 5 µB per Fe atom when Fe substitutes In sites in In2Se3. The theoretical prediction was further confirmed experimentally by magnetic measurement. The results indicate that pure In2Se3 is diamagnetic, whereas FIS exhibits ferromagnetic behavior with a parallel anisotropy at 2 K and a Curie temperature of ∼8 K. Furthermore, the sample maintains stable room-temperature ferroelectricity in piezoresponse force microscopy (PFM) measurement after the introduction of Fe atom into the ferroelectric In2Se3 nanoflakes. The findings indicate that the layered Fe0.16In1.84Se3 materials have potential in future nanoelectronic, magnetic, and optoelectronic applications.
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