光探测
光电子学
量子点
光电探测器
材料科学
吸收(声学)
红外线的
半导体
比探测率
探测器
红外探测器
纳米技术
光学
暗电流
物理
复合材料
作者
Emmanuel Lhuillier,Marion Scarafagio,Patrick Hease,Brice Nadal,H. Aubin,Xiang Xu,Nicolas Lequeux,G. Patriarche,Sandrine Ithurria,Benoît Dubertret
出处
期刊:Nano Letters
[American Chemical Society]
日期:2016-01-21
卷期号:16 (2): 1282-1286
被引量:145
标识
DOI:10.1021/acs.nanolett.5b04616
摘要
Infrared thermal imaging devices rely on narrow band gap semiconductors grown by physical methods such as molecular beam epitaxy and chemical vapor deposition. These technologies are expensive, and infrared detectors remain limited to defense and scientific applications. Colloidal quantum dots (QDs) offer a low cost alternative to infrared detector by combining inexpensive synthesis and an ease of processing, but their performances are so far limited, in terms of both wavelength and sensitivity. Herein we propose a new generation of colloidal QD-based photodetectors, which demonstrate detectivity improved by 2 orders of magnitude, and optical absorption that can be continuously tuned between 3 and 20 μm. These photodetectors are based on the novel synthesis of n-doped HgSe colloidal QDs whose size can be tuned continuously between 5 and 40 nm, and on their assembly into solid nanocrystal films with mobilities that can reach up to 100 cm(2) V(-1) s(-1). These devices can be operated at room temperature with the same level of performance as the previous generation of devices when operated at liquid nitrogen temperature. HgSe QDs can be synthesized in large scale (>10 g per batch), and we show that HgSe films can be processed to form a large scale array of pixels. Taken together, these results pave the way for the development of the next generation mid- and far-infrared low-cost detectors and camera.
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