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Enhancing external quantum efficiency of deep ultraviolet micro-leds through geometry design and multi-physics field coupling analysis

发光二极管 联轴节(管道) 量子 领域(数学) 物理 光电子学 材料科学 量子力学 数学 复合材料 纯数学
作者
Yujie Gao,Xun Hu,Ling-li Zhu,Na Gao,Rui Zhou,Yaping Wu,Kai Huang,Shuping Li,Junyong Kang,Rong Zhang
出处
期刊:Semiconductor Science and Technology [IOP Publishing]
卷期号:39 (5): 055007-055007 被引量:2
标识
DOI:10.1088/1361-6641/ad3a93
摘要

Abstract High-efficiency deep-ultraviolet (DUV) micro light-emitting diodes (LEDs) are explored for inspiring development in numerous fields, such as non-line-of-sight solar-blind communication, optical pumping, and maskless lithography. In this study, we performed FDTD and SimuLED calculations to investigate the optimized DUV micro-LED structure geometry for high light extraction efficiency (LEE) by designing different mesa structures, including square, hexagonal, and circular geometries of micro-LEDs emitted at a wavelength of 275 nm. The results showed that a circular mesa of 5 μ m diameter achieved a LEE of 27% from the bottom and sidewall emissions of as-prepared DUV micro-LED. And both the near- and far-field transverse magnetic polarized light intensities were enhanced by a factor of 1.5 over the square and hexagonal mesas. Meanwhile, the transverse electric (TE) polarized light of the circular mesa structure was enhanced and concentrated along the normal direction. Moreover, the internal quantum efficiency (IQE) of circular mesas with varied sizes was comprehensively investigated in the interactions of the thermal and electric fields. An AlGaN-based DUV micro-LED with a diameter of 5 μ m was found to obtain the highest IQE owing to a high current-density distribution and its self-heating properties, thereby achieving a sufficiently high external quantum efficiency of 26.75%. This study provides a comprehensive technical report, including electrical, thermal, and optical analyses, and a new perspective for developing high-efficiency, high-performance DUV micro-LEDs in practical applications.
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