有机发光二极管
近红外光谱
光电子学
材料科学
量子效率
红外线的
窄带
量子
二极管
光学
纳米技术
物理
量子力学
图层(电子)
作者
Xiaolong Yang,Shipan Xu,Yan Zhang,Chengyun Zhu,Lin‐Song Cui,Guijiang Zhou,Zhao Chen,Yuanhui Sun
出处
期刊:Angewandte Chemie
[Wiley]
日期:2023-08-26
卷期号:62 (41): e202309739-e202309739
被引量:48
标识
DOI:10.1002/anie.202309739
摘要
Highly efficient near-infrared (NIR) emitters have significant applications in medical and optoelectronic fields, but the development stays a great challenge due to the energy gap law. Here, we report two NIR phosphorescent Ir(III) complexes which display emission peaks around 730 nm with a narrow full width at half maximum of only 43 nm. Therefore, pure NIR luminescence can be obtained without having a very long emission wavelength, thus alleviating the restriction of the energy gap law, and obtaining impressively high photoluminescence quantum yield up to 0.70. More importantly, the pure NIR organic light-emitting diode (OLED) fabricated by the solution-processed mothed shows outstanding device performance with the highest external quantum efficiency of 16.43 %, which sets a new record for solution-processed NIR-OLEDs based on different emitters. This work sheds light on the development of Ir(III) complexes with narrowband emissions as highly efficient pure NIR-emitters.
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