Tunable Quasistationary States in a One-dimensional Quantum Heterostructure

Abstract In this work, we focus on the quasistationary states, lifetime, and transmittance in opened quantum wells with biased and unbiased. In order to solve the quasibound states, the complex eigenenergies are solved in our calculation model by adaptive finite element method. We have demonstrated the accuracy to exam the numerical convergence. In this case, the 1D quantum heterostructure is commonly composed of GaAs and Al x Ga 1-x As. With the different applied bias, the resonant tunneling and transmittance profiles could be changed, respectively. Increasing the thickness of the outermost barrier can be prevented an electron penetrated through the barrier from the quasistationary state. This is a useful way to design easily the high-speed switch for semiconductor devices. Our results of numerical calculations are good agreement with the argument principle method approach. These results are useful and helped us to design quantum devices and quantum computations.