High-Performance Broadband Integrated Detection System for Multifunctional Applications

In the digital era, photodetectors have become indispensable components in optical communication, imaging, and artificial intelligence, driven by the integration of multidisciplinary technologies and the expanding application scenarios. However, traditional photodetectors, constrained by fixed-bandgap semiconductors, falter in delivering broadband sensitivity and miniaturized integration. While narrow-bandgap two-dimensional (2D) materials offer promising solutions for broad-spectrum detection due to their exceptional spectral absorption capabilities, they are still hindered by excessive dark currents (>10–5 A) and noise-induced signal ambiguity, which degrade photosensitivity (Ilight/Idark) and limit real-world utility. Here, we transcend these limitations through a monolithically integrated architecture that synergizes a Ta2NiSe5 photodetector with a MoS2 field-effect transistor (FET) amplification unit, which weakens the noise effect while maintaining its unparalleled photoconductive efficiency. The Ta2NiSe5 photodetector exhibits a broadband photoresponse in the 635–1550 nm range, with a maximum responsivity of 83.5 A/W and detectivity of 2.1 × 1010 Jones, while the photosensitivity is amplified up to 3.7 × 103 with a 3200-fold enhancement under 1550 nm illumination by integrating the FET as an amplification unit. This breakthrough enables high-contrast single-pixel imaging with 99% neural network recognition accuracy, outperforming bare Ta2NiSe5 detectors in training efficiency. Based on the above performance optimization, we demonstrated signal-coded transmission and high-fidelity signal reproduction in fiber-optic communication bands and executed reconfigurable OR/AND logic operations via gate voltage and optical inputs, demonstrating dual-field (optical/electrical) programmability. These results indicate that the system has significant potential for secure optical communications, digital circuits, and artificial vision applications and provides a promising technological path for developing high-performance and multifunctional on-chip optoelectronic systems.