放大器
电阻抗
输电线路
电气工程
变压器
材料科学
电子工程
参量振荡器
阻抗匹配
光电子学
约瑟夫森效应
物理
工程类
电压
超导电性
凝聚态物理
CMOS芯片
作者
Tianshi Zhou,Wenqu Xu,Quan Zuo,Jiazheng Pan,Zishuo Li,Kaixuan Zhang,Tingting Guo,Yifan Sheng,Lingxiao Jing,Huashi Ma,Mingyuan Yu,Sining Zhou,Binglin Li,Shiyao Yang,Yongyang Yu,Jiyuan Zhu,Junzhou Zhang,Jinpeng Li,Chunhai Cao,Guozhu Sun
摘要
We report the fabrication and characterization of an impedance matched Josephson parametric amplifier (IMPA). A multisection λ/4 transmission line transformer (TLT) is utilized, which can reduce the input impedance and provide a wide impedance matched bandwidth. In addition, the whole IMPA device is fabricated on a LaAlO3 substrate with a dielectric constant of 23.4, much larger compared to the commonly used intrinsic silicon substrate, to provide larger grounded capacitance, making the fabrication of the multisection λ/4 TLT more precise and reliable. The experimental results show that by adjusting the working point, the amplifier has a bandwidth of 580 MHz with a gain of more than 15 dB. The average input saturation power is about −115 dBm within the bandwidth. Additionally, its noise performance is close to the quantum-limited level.
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