Reversible Manipulation of Polar Topologies in Oxide Ferroelectrics via Electric Fields

Polar topologies show great potentials in memories and other nano-micro devices. To integrate with silicon conducting circuits, it is vital to understand the dynamic evolution and the transformation of different domain configurations under external stimulus. Here in situ transmission electron microscopy is performed and the electrically controlled creation and annihilation of large-scale polar flux-closure array from typical c/a domains in PbTiO