Study of spontaneous emission in GaAs and the effect due to size modification

The spontaneous emission phenomenon was described based on Einstein's concept of atomic transition probabilities to explain the interaction between matter and radiation. The amount of radiation absorbed by the material will determine the amount of energy per unit area and time radiated spontaneously. In this paper, the spontaneous emission characteristics of the GaAs material will be presented based on the maximum emission power produced. Spontaneous emission power calculation was performed using COMSOL Multiphysics 3.5 software. The geometry of the material is modeled in a 2D structure. The investigation was conducted to determine the effect of absorption wavelength (at intervals of 445 to 875 um) and variations in material size (variation of thickness and width of material) on the maximum emission power of GaAs material. The results show that the spontaneous emission of GaAs with the greatest emission power is produced in the absorption region corresponding to the material's bandgap. In addition, modification of the material size by increasing the width and thickness of the material causes a decrease in the maximum rate of spontaneous emission.