材料科学
光电子学
晶体管
暗电流
突触后电流
光电探测器
光电二极管
阈值电压
兴奋性突触后电位
电压
神经形态工程学
电气工程
计算机科学
神经科学
机器学习
工程类
生物
人工神经网络
抑制性突触后电位
作者
Xiaosong Wu,Donghuan Dai,Yao Ling,Shuo Chen,Chongyu Huang,Shiyu Feng,Weiguo Huang
标识
DOI:10.1021/acsami.0c05809
摘要
Tremendous progress has been achieved on organic transistor-based photodetectors; however, because of the nonpositive correlation relationship between the photo/dark current ratio (P) and the gate voltage, the claimed best P, R (photoresponsivity), and D* (detectivity) can hardly be obtained simultaneously at a given gate voltage, which severely compromises the device performance. Here, a light and voltage dually gated transistor based on an organic semiconducting single crystal of 2,6-dithienylanthracene (DTAnt) is developed. Attributing to its very low on/off ratio in the dark and the remarkable increment of mobilities under illumination, this phototransistor shows good performance with a P of 3.83 × 103, R of 1.32 A W–1, and D* of 1.94 × 1012 Jones achieved simultaneously at Vg = −100 V. Besides, the good reversibility and repeatability of its light-responsive behavior allows for the construction of an artificial photonic neuromorphic device with demonstrated synaptic functions, including excitatory postsynaptic current, short/long-term memory , and pair-pulse facilitation/depression.
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