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Preparation, doping modulation and field emission properties of square-shaped GaN nanowires

纳米线 纤锌矿晶体结构 X射线光电子能谱 材料科学 化学气相沉积 结晶度 选区衍射 纳米材料 透射电子显微镜 纳米技术 兴奋剂 光电子学 物理 核磁共振 冶金 复合材料
作者
Mengqi Yang,Yuhang Ji,Qi Liang,Chang-Hao Wang,Yuefei Zhang,Ming Zhang,Bo Wang,Ru‐Zhi Wang
出处
期刊:Chinese Physics [Science Press]
卷期号:69 (16): 167805-167805 被引量:1
标识
DOI:10.7498/aps.69.20200445
摘要

GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [<inline-formula><tex-math id="M500">\begin{document}$0\bar 110$\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="16-20200445_M500.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="16-20200445_M500.png"/></alternatives></inline-formula>]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.
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