材料科学
光电子学
共发射极
氮化硅
晶体硅
硅
太阳能电池
电介质
前线(军事)
兴奋剂
氮化物
光学
图层(电子)
纳米技术
工程类
物理
机械工程
作者
Jianming Ding,Shuai Zou,Chengkun Wu,Leilei Shen,Jonghyung Choi,Junhu Cui,Dichun Yuan,Hua Sun,Xiaohong Zhang,Xiaodong Su
摘要
Abstract Light management is one of the important methods to increase the efficiency of passivated emitter and rear cells (PERCs). With the help of simulation, we designed and fabricated the industrial Ga‐doped single‐crystalline silicon (sc‐Si) PERC solar cells by integrating the silicon oxynitride (SiO x N y ) with the traditional silicon nitride (SiN x ) dielectric films on both the front and rear surfaces. In the front, the SiO x N y capping effectively decreased the reflectance in the short‐wavelength light range, thus increased the cells' short circuit current ( I sc ) by ~50 mA. In the back, the SiO x N y layer was inserted into the rear SiN x film, thus increased the internal reflection at the rear surface in the long‐wavelength light range, resulting in an about 24‐mA I sc gain. Totally, with the front and rear light management, the champion samples showed the significant improvement with an about 80‐mA increment in I sc of cells compared with the baseline group.
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