光电二极管
图像传感器
光电子学
百叶窗
量子效率
像素
解调
材料科学
CMOS芯片
CMOS传感器
物理
光学
计算机科学
电信
频道(广播)
作者
Yonghun Kwon,Sungyoung Seo,Sunghyuck Cho,Sungho Choi,Taeyon Hwang,Young-Chan Kim,Young-Gu Jin,Youngsun Oh,Min-Sun Keel,Dae-Yun Kim,Myunghan Bae,Yeomyung Km,Seung-Chul Shin,Sunju Hong,Seok-Ha Lee,Ho Woo Park,Yitae Kim,Kyoungmin Koh,Jin-Hyun Ahn
出处
期刊:International Electron Devices Meeting
日期:2020-12-12
被引量:7
标识
DOI:10.1109/iedm13553.2020.9371950
摘要
A 2.8μm 4-tap global shutter pixel has been realized for a compact and high-resolution time of flight (ToF) CMOS image sensor. 20,000 e- of high full-well capacity (FWC) per a tap is obtained by employing a supplementary MOS capacitor. 36% of high quantum efficiency (QE) has been achieved by backside scattering technology (BST) and thick silicon process. In addition, demodulation contrast (DC) is improved to 86 % by additional deep photodiode doping process for static potential gradient in a photodiode.
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