Magnetic properties of Mn and Co doped PbPdO2

We report the dramatic change of gapless semiconductor properties by different chemical doping elements of Co and Mn into PbPdO2. The metal-insulatorlike transition temperature TMI = 100 K for PbPdO2 shifts to a higher temperature of 150 K by the Co doping and to a lower temperature of 70 K by the Mn doping. Because of the anisotropic band structure with the majority of heavy holes and the minority of light electrons, the transport and magnetic properties are significantly changed by the chemical doping elements. At low temperatures, the Co doping enhances ferromagnetic interactions, whereas the Mn doping favors antiferromagnetic interactions. These results are of great interests because you can control the magnetic ordering as well as manipulate the carrier density by changing the doping elements. These materials could be a good candidate for spintronics applications.