Kinetics of polysilicon film growth by thermal decomposition of silane

Several mechanisms for deposition of polysilicon layers by thermal decomposition of silane, in which the transfer of silicon to the surface of growth is accomplished by silane, sililene or disilane, are discussed. It is shown that under defined prerequisites, application of the Langmuir-Hinshelwood model for the acting surfaces in the three cases leads to a kinetic relationship for the growth rate as a function of silane concentration. The temperature dependences of the constants in the relationship for the case of direct deposition from silane are determined. The set of equations obtained can be used for modelling and optimization of various reactors for growth of polysilicon layers.