Study of model of self-coordinated growth of single crystals of sapphire by horizontal directed crystallization

On the basis of the model of the self-coordinated growth of sapphire (Al 2 O 3 ) single crystals by the method of horizontal directed crystallization, formulas explaining the decrease in the growth rate with increasing the crystal thickness are derived. It is shown that a necessary intensity of latent-heat dissipation in the phase transition through the growing-crystal bulk should be provided to retain a constant growth rate. Estimates for conditions under which the passage to the bulk-crystallization growth can be observed and, as a result of which, the grown-crystal characteristics are greatly deteriorated are found.