Sub-25nm single-metal gate CMOS multi-bridge-channel MOSFET (MBCFET) for high performance and low power application

Improving the MBCFET performance further, we have successfully fabricated single-metal-gate high-performance CMOS MBCFET with elevated flat source/drain (EF-S/D) formed by low temperature cyclic selective epitaxial growth (LTC-SEG) of Si. Due to the S/D engineering and LTC-SEG process, we could achieved the symmetric threshold voltage of 0.25V and -0.22V for TiN-gate n-channel MBCFET (nMBCFET) and p-channel MBCFET (pMBCFET), respectively. This single-metal MBCFET simultaneously satisfied the requirements of high-performance (HP) and low operating power (LOP) transistors in ITRS roadmap.