Super Q – A Revolution in Superjunction Technology

Record low specific on-resistance, Rsp, is reported for 200V (77mΩ.mm2@ 220V) and 150V (48mΩ.mm2@ 159V) rated MOSFETs surpassing the performance of field plate (FP) based devices. This has been achieved using a revolutionary method for creating asymmetrical superjunction (SJ) power devices that employ Atomic Layer Deposition (ALD) to create fixed charge within the SJ structure. Feasibility of this technique is demonstrated at voltages up to 650V.