Total ionizing dose and single-event transient effects in 22nm-FDSOI technology by TCAD simulation

Abstract This work employs Technology Computer-Aided Design (TCAD) simulations to systematically investigate the total ionizing dose (TID) effects, single-event transient (SET) effects, and their coupling mechanisms in 22 nm fully depleted silicon-on-insulator (FDSOI) technology. In the TID effects study, FDSOI NMOS devices were simulated using fixed charge model and gamma radiation model separately. The results demonstrate that TID irradiation leads to a reduction in threshold voltage and a significant increase in drain current. Applying a negative back-gate bias effectively mitigates this performance degradation, with devices exhibiting higher radiation sensitivity under OFF-state bias conditions. For the SET effects investigation, the influences of back-gate bias, operating temperature, and linear energy transfer (LET) values on device transient response were systematically examined. The findings indicate that a negative back-gate bias significantly suppresses SET effects, while both the transient current amplitude and collected charge increase substantially with rising temperature and LET values. Furthermore, the impact of TID irradiation on the SET response of both individual devices and a three-stage inverter chain was investigated. Results reveal that TID irradiation not only reduces the SET susceptibility of single NMOS transistors but also effectively suppresses the broadening of SET pulses at each output node of the threestage inverter chain. These findings demonstrate significant interactions between TID and SET effects at both device and circuit levels.