兴奋剂
二硫化钼
同种类的
二极管
量子隧道
材料科学
隧道二极管
光电子学
退火(玻璃)
简并能级
纳米技术
物理
复合材料
量子力学
热力学
作者
Xiaochi Liu,Deshun Qu,Min Kyung Choi,Changmin Lee,Hyoungsub Kim,Won Jong Yoo
摘要
We report on a simple, controllable chemical doping method to fabricate a lateral homogeneous MoS2 tunnel diode. MoS2 was doped to degenerate n- (1.6 × 1013 cm−2) and p-type (1.1 × 1013 cm−2) by benzyl viologen and AuCl3, respectively. The n- and p-doping can be patterned on the same MoS2 flake, and the high doping concentration can be maintained by Al2O3 masking together with vacuum annealing. A forward rectifying p-n diode and a band-to-band tunneling induced backward rectifying diode were realized by modulating the doping concentration of both the n- and p-sides. Our approach is a universal stratagem to fabricate diverse 2D homogeneous diodes with various functions.
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