超导电性
高分辨率透射电子显微镜
凝聚态物理
相干长度
临界场
德拜模型
电阻率和电导率
材料科学
转变温度
堆积
超导相干长度
热容
透射电子显微镜
结晶学
化学
物理
核磁共振
纳米技术
热力学
量子力学
作者
Raman Sankar,G. Peramaiyan,I. Panneer Muthuselvam,Cheng‐Yen Wen,Xiaofeng Xu,F. C. Chou
标识
DOI:10.1021/acs.chemmater.7b04998
摘要
We report the single crystal growth and superconducting properties of a misfit layered (SnS)1.15(TaS2) compound. The transport, magnetic, and thermodynamic properties revealed the superconducting transition with an onset temperature of Tc ∼ 3.01 K. The high resolution transmission electron microscopy (HRTEM) image clearly shows the misfit stacking of SnS and TaS2 layers. Based on the Werthamer–Helfand–Hohenberg (WHH) formula and Ginzburg–Landau theory, the upper critical fields are Hc2(0) = 0.64 ± 0.06 T and 0.22 ± 0.02 T with coherence lengths of ξ = 22.67 and 38.68 nm for field applied perpendicular (H⊥) and parallel (H//) to the plane, respectively. On the basis of the specific heat measurement data analysis of derived parameters including Sommerfeld coefficient γ = 5.831 ± 0.012 mJ mol–1 K–2, Debye temperature ΘD = 151 K, specific heat jump ΔCe/γTc = 0.812, and electron–phonon coupling constant λel–ph ∼ 0.724, all indicate the weak-coupling nature for (SnS)1.15(TaS2) as a misfit layered superconductor. Resistivity measurements show that Tc increases from temperature 3.01 to 3.85 K at 1.95 GPa, and linear dependence of Tc as a function of pressure (P) is observed up to 1.583 GPa.
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