Influence of rare earth substitution on structure, photoluminescence emission properties and Judd-Ofelt analysis of ZnS:Eu3+ red phosphors

A series of Eu 3+ doped ZnS red emitting phosphors were synthesized by conventional low temperature solid state reaction technique. The structural and spectroscopic characteristics of the prepared materials were examined by theoretical and experimental methods. The XRD results confirm the formation of hexagonal structured ZnS material. Similar morphology is obtained from TEM and SEM analysis and the particle size and grain size were calculated. The compositional analysis using EDS confirms the atomic percentage present in the materials. The optical band gap energy of the samples varied from 3.59 to 3.43 eV. The PL emission under excitation 390 nm has greater emission intensity at concentration x = 0.1 in Zn (1- x ) S: x Eu 3+ material. The intense red emission (614 nm) for concentration x = 0.1 have CIE coordinates (0.6090, 0.3905) with color purity 90.41% and CCT 1629.26 K. The site symmetry of Eu 3+ ions was explained using PL emission spectra. The intensity parameters Ω 2 , Ω 4 and Ω 6, radiative properties like branching ratio ( β R ), transition radiative parameter (A R ) , stimulated emission cross section σ e , radiative life time ( τ R ) was calculated from Judd-Ofelt theory. The luminescence decay kinetics was analyzed and the life time of material was calculated in millisecond (ms) range. The strong and intense red emission and the improved stimulated emission cross section offer Eu 3+ doped ZnS material useful for designing optoelectronic device applications. • Synthesis of Pure and varying concentration (1, 2, 3, 10, 20 and 30%) of Eu 3+ doped ZnS phosphor via low temperature solid state reaction method. • Spectroscopic intensity parameters using JO theory and the radiative parameters were investigated. • All the prepared phosphors exhibit intense red emission. • The results suggest the possibility of these phosphors being applied in the field of designing various optoelectronic devices.