光刻胶
抵抗
锡
极端紫外线
紫外线
极紫外光刻
光电子学
材料科学
干扰(通信)
纳米技术
光学
图层(电子)
工程类
频道(广播)
物理
冶金
激光器
电气工程
作者
Jarich Haitjema,Yu Zhang,Michaela Vockenhuber,Dimitrios Kazazis,Yasin Ekinci,Albert M. Brouwer
出处
期刊:Journal of Micro-nanolithography Mems and Moems
[SPIE - International Society for Optical Engineering]
日期:2017-09-15
卷期号:16 (03): 1-1
被引量:32
标识
DOI:10.1117/1.jmm.16.3.033510
摘要
We report on the extreme ultraviolet (EUV) patterning performance of tin-oxo cages. These cage molecules were already known to function as a negative tone photoresist for EUV radiation, but in this work, we significantly optimized their performance. Our results show that sensitivity and resolution are only meaningful photoresist parameters if the process conditions are optimized. We focus on contrast curves of the materials using large area EUV exposures and patterning of the cages using EUV interference lithography. It is shown that baking steps, such as postexposure baking, can significantly affect both the sensitivity and contrast in the open-frame experiments as well as the patterning experiments. A layer thickness increase reduced the necessary dose to induce a solubility change but decreased the patterning quality. The patterning experiments were affected by minor changes in processing conditions such as an increased rinsing time. In addition, we show that the anions of the cage can influence the sensitivity and quality of the patterning, probably through their effect on physical properties of the materials.
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