单层
X射线光电子能谱
薄膜晶体管
材料科学
辐照
接触角
有机半导体
有机电子学
光电子学
薄膜
紫外线
紫外光电子能谱
重氮甲烷
分析化学(期刊)
光化学
化学
化学工程
晶体管
纳米技术
有机化学
图层(电子)
复合材料
物理
核物理学
量子力学
工程类
电压
作者
Satoshi Inoue,Yoshiaki Hattori,M. Kitamura
标识
DOI:10.35848/1347-4065/ac4b92
摘要
A trimethylsilyl-monolayer modified by vacuum ultraviolet (VUV) light has been investigated for use in solution-processed organic thin-film transistors (OTFTs). The VUV irradiation changed a hydrophobic trimethylsilyl-monolayer formed from hexamethyldisilazane vapor into a hydrophilic surface suitable for solution processing. The treated surface was examined via water contact angle measurement and X-ray photoelectron spectroscopy. An appropriate irradiation of VUV light enabled the formation of a dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C 8 -BTBT) film on a modified monolayer by spin-coating. Consequently, the C 8 -BTBT-based OTFT with a monolayer modified for an optimal VUV irradiation time exhibited a field-effect mobility up to 4.76 cm 2 V −1 s −1 . The partial monolayer modification with VUV can be adapted to a variety of solution-processes and organic semiconductors for prospective printed electronics.
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