蚀刻(微加工)
分析化学(期刊)
微波食品加热
原位
等离子体
波长
干涉测量
反应离子刻蚀
二氧化硅
等离子体刻蚀
材料科学
化学
光谱学
氢
光学
光电子学
纳米技术
图层(电子)
冶金
有机化学
物理
量子力学
色谱法
作者
V. Yu. Yurov,A. P. Bolshakov,A. S. Altakhov,I.A. Fedorova,E. V. Zavedeev,А. Ф. Попович,Victor Ralchenko
出处
期刊:Vacuum
[Elsevier]
日期:2022-05-01
卷期号:199: 110939-110939
被引量:2
标识
DOI:10.1016/j.vacuum.2022.110939
摘要
We used a low-coherence interferometry (LCI) to measure in situ the etch rate of silica surfaces in H2 microwave plasma at high temperatures of 970–1480 °C. The method allows collection of kinetic data on a single sample without switching-off the plasma, moreover, the LCI provides simultaneous measurements of the sample thickness and temperature evolution. The etching rates up to ∼80 nm/min are measured, and activation energy for SiO2 reaction with atomic hydrogen is determined. Appearance of Si atoms in the plasma as a result of the etching was monitored with optical emission spectroscopy, and a very good correlation of intensity of Si lines at 288 и 390 nm wavelengths in the spectra with the etching rate is demonstrated. The data on the surface relief modification caused by the etching are presented.
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