材料科学
记忆电阻器
弯曲
聚合物
抗弯强度
变量(数学)
接口(物质)
复合材料
工作(物理)
光电子学
电子工程
机械工程
数学分析
数学
毛细管数
毛细管作用
工程类
作者
Shuai-Shuai Qi,Fei Yang,Jian‐Chang Li
摘要
We systematically study the fatigue failure of the Ag/Poly (3-hexylthiophene-2,5-diyl)(P3HT)/WO3/ITO/PET flexible memristor under variable temperatures, which simulates essential synaptic learning functions. The theoretical calculations and finite element analysis results indicate that the P3HT/WO3 interface plays a key role in device fatigue failure at variable temperatures. As the temperature dropped from 100 to −30 °C, a significant decrease in the loosely adsorbed polymer chains and flattened chains occurs at the P3HT/WO3 interface and thus leads to the deterioration of the P3HT/WO3 interface. The weak P3HT/WO3 interfacial bonding substantially accelerates the crack propagation under low-temperature flexural cycles, which will ultimately cause the device to deteriorate. Our work may provide some useful information for future achievement of flexible memory synapses utilized in cryogenic environments.
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