Raman spectroscopy studies of spin-wave in V2O3thin films

We present studies of the enhancement of spin-wave intensity and thickness dependence of spin-wave frequency in V2O3 thin films using Raman spectroscopy. Our results show that the intensity of spin-wave at ~450 cm−1 can be enhanced with a 633 nm laser rather than a 514 nm laser. The enhancement of spin-wave intensity is due to a resonance effect correlated with the on-site V 3d–3d Coulomb energy. A thickness dependence study shows that as the film thickness increases, the frequency of spin-wave at ~450 cm−1 has a redshift, while the frequency of the A g phonon at ~525 cm−1 has negligible shift. In comparison to the thickness dependence of the XRD results, we conclude that the spin-wave at ~450 cm−1 in V2O3 exists in the basal a–b plane, and the Raman study of the spin-wave provides a sensitive method for investigating the lattice and/or structure properties of crystals.