Effect of thermal annealing on electrical and photoelectrical properties of n-InSb

InSb wafers of n-type conductivity were annealed at 300, 370 and 400 °C for 30 min in an open tube system under flowing argon ambient.The conductivity type conversion are revealed for the first time in samples with the electron concentration ~1.0•10 14 cm -3 for all annealing temperatures.Experimental evidences have been obtained that this phenomenon has a bulk character.In annealed samples the spectral response exhibits pronounced increase in the short-wave region.The effect of annealing on electrical and photoelectrical properties of n-InSb has been explained by formation of In Sb antisites.