材料科学
转印
半导体
薄膜
图层(电子)
纳米技术
柔性电子器件
可伸缩电子设备
数码产品
无定形固体
光电子学
太阳能电池
有机电子学
复合材料
晶体管
电气工程
电压
有机化学
化学
工程类
作者
Jiyoon Nam,Youngjoo Lee,Wonjung Choi,Chang Su Kim,Hogyoung Kim,Jongbok Kim,Dong‐Ho Kim,Sungjin Jo
标识
DOI:10.1002/aenm.201601269
摘要
Recently, the rapid and significant progress in the development of various stretchable electronics has triggered intense research interest. Although the remarkable features of transfer printing processes have enabled the use of inorganic crystalline semiconductors in various types of stretchable devices, including solar cells, light‐emitting diodes, circuits, and photodetectors, there are few examples of stretchable electronics using thin film semiconductors. Transfer printing of inorganic amorphous thin film semiconductors remains a challenge because no suitable sacrificial layer is available. To meet this challenge, a water‐soluble germanium oxide sacrificial layer is developed. Stretchable inorganic amorphous thin film solar cells are produced using a transfer printing process with a water‐soluble sacrificial layer. This first attempt to fabricate stretchable solar cells with inorganic amorphous thin film semiconductors significantly broadens the scope of solar cell applications. Moreover, the germanium oxide sacrificial layer can be used in other thin film electronics applications.
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