联轴节(管道)
散射
电子迁移率
杂质
凝聚态物理
库仑
电子
物理
材料科学
光学
量子力学
冶金
作者
H. P. R. Frederikse,W. R. Hosler
出处
期刊:Physical Review
[American Physical Society]
日期:1967-09-15
卷期号:161 (3): 822-827
被引量:239
标识
DOI:10.1103/physrev.161.822
摘要
Electron mobilities in reduced and doped SrTi${\mathrm{O}}_{3}$ have been deduced from measurements of the conductivity and Hall coefficient between 1 and 1000\ifmmode^\circ\else\textdegree\fi{}K. Above room temperature, scattering by the highest two longitudinal optical modes determines the mobility. Expressions based on intermediate electron-phonon coupling yield good agreement with experimental results. Below 10\ifmmode^\circ\else\textdegree\fi{}K experiments indicate that ionized impurity scattering is the dominant collision process. Using a screened Coulomb potential, one obtains mobility values of the right order of magnitude.
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