共发射极
硅
材料科学
氧化物
欧米茄
分析化学(期刊)
光电子学
化学
物理
冶金
色谱法
量子力学
标识
DOI:10.1109/pvsc.1990.111625
摘要
Polysilicon emitters with a thermally grown interfacial oxide are examined in great detail. Both J/sub o/ and p/sub c/ are measured for the polysilicon emitter (contact) which is annealed under various conditions. J/sub o/ >
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