晶闸管
集成门极换流晶闸管
MOS控制晶闸管
脉冲功率
电气工程
门极关断晶闸管
功率(物理)
串并联电路
功率半导体器件
电压
电子工程
堆栈(抽象数据类型)
计算机科学
工程类
物理
晶体管
栅氧化层
量子力学
程序设计语言
作者
G.H. Rim,S.V. Shenderey
标识
DOI:10.1109/iecon.2003.1279964
摘要
One of the key issues in high-voltage pulsed power generation is switch technology. There are several switch options for high-power single pulse applications such as TVS (triggered vacuum switches), arc gap switches, thyratrons and ignitrons. However, in high frequency pulsed power applications semiconductor switches are more preferable despite of their limit of di/dt and dv/dt due to their lifetime and ease of control circuitry. To explore some of the thyristor characteristics for pulsed power applications, a series connection scheme with only active one driver is proposed. A thyristor stack for l0kV has been designed and built for experimental verification using ten (1,200 V, 40A made by EUPEC) thyristors. This paper contains the descriptions on the stack configurations, component parameters and dynamic and static behaviors of the thyristor switches.
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