The physical failure analysis (PFA) of I/sub DDQ/ and I/sub DDQ/spl I.bar/delta/ fail in 90nm logic products

As part of a manufacturing test, I/sub DDQ/ method has played an indispensable role within the entire fault detection process and I/sub IDD/spl I.bar/delta/ test has been identified as one of the possible ways to extend the usability of I/sub DDQ/. For the physical failure analysis (PFA) of I/sub DDQ//I/sub DDQ/spl I.bar/delta/ failure parts, emission microscope (EMMI) is widely used for defect site localization. And then the positive voltage contrast (PVC) and the I-V curves measurement for individual contacts by C-AFM were performed to identify the precise defect location and real leakage path. The different types of defect were observed: crystal defect induced P+/NW contact leakage and poly-silicon (poly-Si) filled into shallow trench isolation (STI) voids induced leakage are the major defects in this work.