Development of a novel immunoFET technology‐based POC assay for detection of Leishmania donovani and Leishmania major

抗原 杜氏利什曼原虫 多克隆抗体 生物 利什曼原虫 抗体 材料科学 内脏利什曼病 利什曼病 免疫学 寄生虫寄主 计算机科学 万维网
作者
Nebiye Yentür Doni,Paul Bertani,Greta Volpedo,Noushin Saljoughian,Sanjay Varikuti,Greg Matlashewski,Wu Lu,Abhay R. Satoskar
出处
期刊:Parasite Immunology [Wiley]
卷期号:45 (7): e12984-e12984 被引量:1
标识
DOI:10.1111/pim.12984
摘要

Abstract Leishmaniasis is considered as one of the 20 neglected tropical diseases. Current methods of leishmanial diagnosis depend on conventional laboratory‐based techniques, which are time‐consuming, costly and require special equipment and trained personnel. In this context, we aimed to provide an immuno field effect transistors (ImmunoFET) biosensor that matches the conventional standards for point‐of‐care (POC) monitoring and detection of Leishmania (L.) donovani / Leishmania major . Crude antigens prepared by repeated freeze thawing of L. donovani/L. major stationary phase promastigotes were used for ELISA and ImmunoFETs. Lesishmania ‐specific antigens were serially diluted in 1× PBS from a concentration of 10 6 –10 2 parasites/mL. A specific polyclonal antibody‐based sandwich ELISA was established for the detection of Leishmania antigens. An immunoFET technology‐based POC novel assay was constructed for the detection of Leishmania antigens. Interactions between antigen–antibody at the gate surface generate an electrical signal that can be measured by semiconductor field‐effect principles. Sensitivity was considered and measured as the change in current divided by the initial current. The final L. donovani / L. major crude antigen protein concentrations were measured as 1.50 mg/mL. Sandwich ELISA against the Leishmania 40S ribosomal protein detected Leishmania antigens could detect as few as 100 L. donovani/L. major parasites. An immunoFET biosensor was constructed based on the optimization of aluminium gallium nitride/gallium nitride (AlGaN/GaN) surface oxidation methods. The device surface was composed by an AlGaN/GaN wafer with a 23 nm AlGaN barrier layer, a 2 μm GaN layer on the silicon carbide (SiC) substrate for Leishmania binding, and coated with a specific antibody against the Leishmania 40S ribosomal protein, which was successfully detected at concentrations from 10 6 to 10 2 parasites/mL in 1× PBS. At the concentration of 10 4 parasites, the immunoFETs device sensitivities were 13% and 0.052% in the sub‐threshold regime and the saturation regime, respectively. Leishmania parasites were successfully detected by the ImmunoFET biosensor at a diluted concentration as low as 150 ng/mL. In this study, the developed ImmunoFET biosensor performed well. ImmunoFET biosensors can be used as an alternative diagnostic method to ELISA. Increasing the sensitivity and optimization of immuno‐FET biosensors might allow earlier and faster detection of leishmaniasis.
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